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| GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application * * * * * Enhancement mode type High speed : tf = 0.11 s (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.4 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1000 25 29 57 120 15 120 80 200 150 -55 to 150 Unit V V A A A W C C JEDEC JEITA TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 4.0 Unit C/W C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate Emitter GT60N322 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60N322 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 15 A, VGE = 0 IF = 60 A, di/dt = -20 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 1000 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 60 A VGG = 15 V, RG = 51 (Note 1) Min 4.0 Typ. 2.4 4200 0.33 0.45 0.11 0.41 1.2 0.75 Max 500 0.1 7.0 2.9 0.22 1.9 1.7 V s s Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton 2 2006-11-01 GT60N322 IC - VCE 120 Common emitter 100 Tc = -40C 10 15 20 120 8 Common emitter 100 Tc = 25C IC - VCE 20 10 15 8 (A) Collector current IC 60 Collector current IC 80 (A) 80 60 40 40 7 7 20 VGE = 6 V 1 2 3 4 5 6 20 VGE = 6 V 1 2 3 4 5 6 0 0 0 0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 120 Common emitter 100 Tc = 125C 20 10 15 120 Common emitter 100 V CE = 5V IC - VGE (A) Collector current IC 60 7 Collector current IC 80 (A) 80 60 40 25 Tc = 125 C 6 0 0 2 4 6 8 10 40 20 8 40 20 VGE = 6 V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE (sat) - Tc 4 Common emitter VGE = 15 V 3 Collector-emitter saturation voltage VCE (sat) (V) IC = 80 A 60 30 2 10 1 0 -60 -20 20 60 100 140 Case temperature Tc (C) 3 2006-11-01 GT60N322 VCE, VGE - QG 200 20 Common emitter RL = 2.5 Tc = 25C 150 15 30000 10000 C - VCE Common emitter VGE = 0 f = 1 MHz Tc = 25C VCE (V) VGE (V) Collector-emitter voltage (pF) 5000 3000 1000 500 300 100 50 30 10 0 Cies 100 VCE = 150 V 50 100 10 Gate-emitter voltage Capacitance C Coes 50 5 Cres 0 0 60 120 180 0 240 10 100 1000 10000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time - RG 5 3 Common emitter VCC = 600 V IC = 60 A VGG = 15 V 1 Tc = 25C 0.5 0.3 tf 0.1 0.05 0.03 10 Switching Time - IC Common emitter 5 VCC = 600 V 3 RG = 51 VGG = 15 V Tc = 25C 1 toff ton 0.1 0.05 0.03 tf tr toff ton tr Switching time (s) Switching time (s) 1000 0.5 0.3 0.01 1 10 100 0.01 1 10 20 30 40 50 60 70 Gate resistance RG () Collector current IC (A) Safe Operating Area 1000 500 300 * Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1000 500 300 Reverse Bias SOA Tj < 125C = VGG = 20 V RG = 10 (A) Collector current IC 50 30 DC operation 1 ms* 100 s* 10 s* Collector current IC 3000 100 (A) 100 50 30 10 5 3 IC max (pulsed)* IC max (continuous) 10 5 3 10 ms * 1 1 3 10 30 100 300 1000 1 1 3 10 30 100 300 1000 3000 Collector- emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2006-11-01 GT60N322 Rth (t) - tw Tc = 25C Transient thermal impedance Rth (t) (C/W) 101 Diode stage 10 0 IGBT stage 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 101 102 Pulse width tw (s) IC max - Tc 60 100 Common emitter VGE = 15 V 80 Common collector IF - VF Maximum DC collector current ICmax (A) 50 Forward current IF 40 (A) 60 30 40 -40 20 Tc = 125 C 0 25 50 75 100 125 150 0 0.0 0.5 1.0 25 20 10 1.5 2.0 2.5 Case temperature Tc (C) Forward voltage VF (V) trr, lrr - IF 1.0 Common Collector di/dt = -20 A/s Tc = 25C trr 0.6 8 10 1.0 Common collector IF = 60 A Tc = 25C trr trr, lrr - di/dt 50 (A) trr (s) Irr Peak reverse recovery current 0.6 30 0.4 lrr 7 0.4 lrr 0.2 20 0.2 6 10 0.0 0 20 40 60 5 80 0.0 0 40 80 120 160 0 200 Forward current IF (A) di/dt (A/s) 5 2006-11-01 Peak reverse recovery current Reverse recovery time Reverse recovery time Irr 0.8 trr (s) 9 0.8 40 (A) GT60N322 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01 |
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